This paper describes a high-performance thin-film transistor (TFT) fabricated using TiO2 and InGaZnO semiconducting layers. Favorable transistor characteristics, including a low threshold voltage of 0.45 V, a small subthreshold swing of 174 mV/decade, and a high field effect mobility of 19 cm(2)/V s at a low drive voltage of <2 V, were achieved. This favorable performance mainly resulted from the combined effect of the high-dielectric-constant gate dielectric and the TiO2-InGaZnO active semiconductor bilayer, which reduced the operating voltage, enhanced the device mobility, and improved the transistor gate swing. This TiO2-InGaZnO TFT exhibits great potential for future high-speed and high-resolution display applications. (C) 2014 Elsevier Ltd. All rights reserved.
- InGaZnO (IGZO); Thin-film transistor (TFT); Titanium oxide (TiO2)
- ROOM-TEMPERATURE; POLYCARBONATE SUBSTRATE; GATE DIELECTRICS; HIGH-MOBILITY; ZINC-OXIDE; DISPLAYS
Hsu, H-H., Cheng, C-H., Chiou, P., Chiu, Y. C., Chang, C-Y., & Zheng, Z. W. (2014). Amorphous bilayer TiO2-InGaZnO thin film transistors with low drive voltage. Solid-State Electronics, (99), 51-54. https://doi.org/10.1016/j.sse.2014.05.010