Ambipolar MoTe2 transistors and their applications in logic circuits

Yen Fu Lin*, Yong Xu, Sheng Tsung Wang, Song Lin Li, Mahito Yamamoto, Alex Aparecido-Ferreira, Wenwu Li, Huabin Sun, Shu Nakaharai, Wen-Bin Jian, Keiji Ueno, Kazuhito Tsukagoshi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

267 Scopus citations

Abstract

We report ambipolar charge transport in α-molybdenum ditelluride (MoTe2) flakes, whereby the temperature dependence of the electrical characteristics was systematically analyzed. The ambipolarity of the charge transport originated from the formation of Schottky barriers at the metal/MoTe2 contacts. The Schottky barrier heights as well as the current on/off ratio could be modified by modulating the electrostatic fields of the back-gate voltage (V bg) and drain-source voltage (V ds). Using these ambipolar MoTe2 transistors we fabricated complementary inverters and amplifiers, demonstrating their feasibility for future digital and analog circuit applications.

Original languageEnglish
Pages (from-to)3263-3269
Number of pages7
JournalAdvanced Materials
Volume26
Issue number20
DOIs
StatePublished - 28 May 2014

Keywords

  • ambipolar transistors
  • electronics
  • Schottky barriers
  • transistors

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