Ambient stability enhancement of thin-film transistor with InGaZnO capped with InGaZnO:N bilayer stack channel layers

Po-Tsun Liu*, Yi Teh Chou, Li Feng Teng, Fu Hai Li, Chur Shyang Fuh, Han Ping D. Shieh

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

42 Scopus citations

Abstract

A thin-film transistor (TFT) with bilayer stack structure of amorphous nitrogenated InGaZnO (IGZO) (a-IGZO:N) on an IGZO channel is proposed to enhance device stability. The a-IGZO:N acting as a back-channel passivation (BCP) is formed sequentially just after the sputter-deposited amorphous IGZO (a-IGZO) film with in situ nitrogen incorporation process. The a-IGZO:N can effectively prevent the a-IGZO channel from exposing to the atmosphere and retarding interactions with ambient oxygen species. Also, the optical energy bandgap of the a-IGZO:N film is decreased due to the addition of nitrogen. This causes the a-IGZO TFT with a-IGZO:N BCP to exhibit high immunity to the ultraviolet-radiation impact.

Original languageEnglish
Article number5995139
Pages (from-to)1397-1399
Number of pages3
JournalIEEE Electron Device Letters
Volume32
Issue number10
DOIs
StatePublished - 1 Oct 2011

Keywords

  • in situ back-channel passivation (BCP)
  • InGaZnO (IGZO)
  • nitrogenated InGaZnO (IGZO:N)

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