Aluminium incorporation in lanthanum oxide films by using plasma immersion ion implantation

Banani Sen*, B. L. Yang, Hei Wong, P. K. Chu, A. Huang, K. Kakushima, H. Iwai

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

The physics and the effects of aluminium incorporation into lanthanum oxide (La2O3) films were studied by using x-ray photoelectron spectroscopy and electrical measurements. We found that trace amount (5%) of aluminium incorporation in lanthanum oxide film can suppress the leakage current effectively. The bulk oxide traps and interface traps can also reduced. The percentage of aluminium incorporation into the La2O3 films by plasma immersion ion-implantation needs to be optimized to have the maximum reduction of oxide traps and to maintain the lowest leakage current.

Original languageEnglish
Title of host publicationIEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
Pages173-176
Number of pages4
DOIs
StatePublished - 2007
EventIEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007 - Tainan, Taiwan
Duration: 20 Dec 200722 Dec 2007

Publication series

NameIEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007

Conference

ConferenceIEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
CountryTaiwan
CityTainan
Period20/12/0722/12/07

Keywords

  • Aluminium
  • Lanthanum oxide
  • Plasma immersion ion implantation
  • X-ray photoelectron spectroscopy

Fingerprint Dive into the research topics of 'Aluminium incorporation in lanthanum oxide films by using plasma immersion ion implantation'. Together they form a unique fingerprint.

  • Cite this

    Sen, B., Yang, B. L., Wong, H., Chu, P. K., Huang, A., Kakushima, K., & Iwai, H. (2007). Aluminium incorporation in lanthanum oxide films by using plasma immersion ion implantation. In IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007 (pp. 173-176). [4450090] (IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007). https://doi.org/10.1109/EDSSC.2007.4450090