Alternative dielectrics for advanced SOI MOSFETs: Thermal properties and short channel effects

N. Bresson*, S. Cristoloveanu, K. Oshima, C. Mazuré, F. Letertre, H. Iwai

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

14 Scopus citations

Abstract

SOI devices exhibit excellent performance and scalability but the presence of the buried oxide (BOX) induces self-heating. A possible solution is to replace the SiO2 BOX with other dielectrics that offer improved thermal conductance without degrading the electrical properties. The trade-off between short-channel and thermal effects in advanced SOI MOSFETs (10 nm thick, 20-50 nm long) is examined by comparing various materials: Al2O 3, SiC, Quartz, Diamond, and air. Diamond and quartz are excellent candidates for relatively thick BOX whereas alumina and SiC are suitable for ultra-thin BOX. This novel structure can be fabricated by wafer bonding technology.

Original languageEnglish
Pages (from-to)62-64
Number of pages3
JournalProceedings - IEEE International SOI Conference
StatePublished - 2004
Event2004 IEEE International SOI Conference, Proceedings - Charleston, SC, United States
Duration: 4 Oct 20047 Oct 2004

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