SOI devices exhibit excellent performance and scalability but the presence of the buried oxide (BOX) induces self-heating. A possible solution is to replace the SiO2 BOX with other dielectrics that offer improved thermal conductance without degrading the electrical properties. The trade-off between short-channel and thermal effects in advanced SOI MOSFETs (10 nm thick, 20-50 nm long) is examined by comparing various materials: Al2O 3, SiC, Quartz, Diamond, and air. Diamond and quartz are excellent candidates for relatively thick BOX whereas alumina and SiC are suitable for ultra-thin BOX. This novel structure can be fabricated by wafer bonding technology.
|Number of pages||3|
|Journal||Proceedings - IEEE International SOI Conference|
|State||Published - 2004|
|Event||2004 IEEE International SOI Conference, Proceedings - Charleston, SC, United States|
Duration: 4 Oct 2004 → 7 Oct 2004