Alternating Layer and Island Growth of Pb on Si by Spontaneous Quantum Phase Separation

Hawoong Hong, C. M. Wei, M. Y. Chou, Z. Wu, L. Basile, Haydn Chen, M. Holt, T. C. Chiang

Research output: Contribution to journalArticlepeer-review

72 Scopus citations

Abstract

Real-time in situ x-ray studies of continuous Pb deposition on [Formula presented] at 180 K reveal an unusual growth behavior. A wetting layer forms first to cover the entire surface. Then islands of a fairly uniform height of about five monolayers form on top of the wetting layer and grow to fill the surface. The growth then switches to a layer-by-layer mode upon further deposition. This behavior of alternating layer and island growth can be attributed to spontaneous quantum phase separation based on a first-principles calculation of the system energy.

Original languageEnglish
Article number076104
Pages (from-to)1-4
Number of pages4
JournalPhysical Review Letters
Volume90
Issue number7
DOIs
StatePublished - 21 Feb 2003

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