Al2O3 Interface engineering of germanium epitaxial layer grown directly on silicon

Yew Heng Tan*, Kwang Sing Yew, Kwang Hong Lee, Yao Jen Chang, Kuan-Neng Chen, Diing Shenp Ang, Eugene A. Fitzgerald, Chuan Seng Tan

*Corresponding author for this work

Research output: Contribution to journalArticle

8 Scopus citations

Abstract

The quality of germanium (Ge) epitaxial film grown directly on silicon (Si) substrate is investigated based on the electrical properties of a metal-oxide-semiconductor capacitor (MOSCAP). Different thermal cycling temperatures are used in this study to investigate the effect of temperature on the Ge film quality. Prior to high-k dielectric deposition, various surface treatments are applied on the Ge film to determine the leakage current density using scanning tunneling microscopy. The interface trap density (Dit) and leakage current obtained from the C-V and I-V measurements on the MOSCAP, as well as the threading dislocation density (TDD), show a linear relationship with the thermal cycling temperature. It is found that the Ge epitaxial film that undergoes the highest thermal cycling temperature of 825 °C and surface treatment in ultraviolet ozone, followed by germanium oxynitride (GeO xNy) formation, demonstrates the lowest leakage current of ∼ 2.3 × 108 A/cm2 (at-2 V), Dit ∼ 3.5 × 1011 cm 2/V, and TDD < 107 cm -2.

Original languageEnglish
Article number6353194
Pages (from-to)56-62
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume60
Issue number1
DOIs
StatePublished - 1 Jan 2013

Keywords

  • Germanium (Ge)
  • interface state density
  • interfacial layer
  • oxide

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