AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition

An Jye Tzou*, Kuo Hsiung Chu, I. Feng Lin, Erik Østreng, Yung Sheng Fang, Xiao Peng Wu, Bo Wei Wu, Chang Hong Shen, Jia Ming Shieh, Wen Kuan Yeh, Chun Yen Chang, Hao-Chung Kuo

*Corresponding author for this work

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Abstract

We report a low current collapse GaN-based high electron mobility transistor (HEMT) with an excellent thermal stability at 150 °C. The AlN was grown by N2-based plasma enhanced atomic layer deposition (PEALD) and shown a refractive index of 1.94 at 633 nm of wavelength. Prior to deposit AlN on III-nitrides, the H2/NH3 plasma pre-treatment led to remove the native gallium oxide. The X-ray photoelectron spectroscopy (XPS) spectroscopy confirmed that the native oxide can be effectively decomposed by hydrogen plasma. Following the in situ ALD-AlN passivation, the surface traps can be eliminated and corresponding to a 22.1% of current collapse with quiescent drain bias (VDSQ) at 40 V. Furthermore, the high temperature measurement exhibited a shift-free threshold voltage (Vth), corresponding to a 40.2% of current collapse at 150 °C. The thermal stable HEMT enabled a breakdown voltage (BV) to 687 V at high temperature, promising a good thermal reliability under high power operation.

Original languageEnglish
Article number315
JournalNanoscale Research Letters
Volume12
DOIs
StatePublished - 1 Jan 2017

Keywords

  • Atomic layer deposition (ALD)
  • Current collapse
  • GaN
  • High electron mobility transistor (HEMT)
  • Surface passivation

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    Tzou, A. J., Chu, K. H., Lin, I. F., Østreng, E., Fang, Y. S., Wu, X. P., Wu, B. W., Shen, C. H., Shieh, J. M., Yeh, W. K., Chang, C. Y., & Kuo, H-C. (2017). AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition. Nanoscale Research Letters, 12, [315]. https://doi.org/10.1186/s11671-017-2082-0