The alkylation of pore surfaces of the nanoporous silica layer by the a-SiC:H layer was investigated. Two film stack structures were fabricated on Si(100) wafers. The film stacks of a-SiC:H were prepared, and nanoporous silica thin films were molecularly templated. The results show that the carbon content in the nanoporous film decreases with increasing the a-SiC:H deposition temperature due to a denser a-SiC:H film formed at higher temperatures.
|Number of pages||8|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|State||Published - 1 May 2004|