Alkylation of nanoporous silica thin films by high density plasma chemical vapor deposition of a-SiC:H

Fu-Ming Pan*, B. W. Wu, A. T. Cho, K. C. Tsai, T. G. Tsai, K. J. Chao, J. Y. Chen, Li Chang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

The alkylation of pore surfaces of the nanoporous silica layer by the a-SiC:H layer was investigated. Two film stack structures were fabricated on Si(100) wafers. The film stacks of a-SiC:H were prepared, and nanoporous silica thin films were molecularly templated. The results show that the carbon content in the nanoporous film decreases with increasing the a-SiC:H deposition temperature due to a denser a-SiC:H film formed at higher temperatures.

Original languageEnglish
Pages (from-to)1067-1074
Number of pages8
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume22
Issue number3
DOIs
StatePublished - 1 May 2004

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