AlGaNGaN Schottky barrier diodes with multi-MgxNyGaN buffer

K. H. Lee, S. J. Chang, P. C. Chang, Y. C. Wang, Cheng-Huang Kuo

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

AlGaNGaN Schottky barrier diodes (SBDs) with multi- Mgx Ny GaN buffer were fabricated and investigated. It was found that we can effectively suppress the formation of threading dislocation in the epitaxial layers and thus obtain better crystal quality using the multi- Mgx Ny GaN buffer. It was also found that we can achieve a larger effective Schottky barrier height and thus reduce leakage current of the SBDs by using the multi- Mgx Ny GaN buffer.

Original languageEnglish
JournalJournal of the Electrochemical Society
Volume155
Issue number10
DOIs
StatePublished - 22 Sep 2008

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