AlGaN/GaN multiple quantum wells grown by using atomic layer deposition technique

Ming Hua Lo*, Zhen Yu Li, Shih Wei Chen, Jhih Cang Hong, Tien-chang Lu, Hao-Chung Kuo, Shing Chung Wang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We report the successful growth of high quality ultraviolet (UV) AlGaN/GaN multiple quantum wells (MQWs) structure using atomic layer deposition (ALD) technique. The AlGaN/GaN MQW sample grown on the sapphire substrate consisted of three GaN QWs and four AlGaN barriers comprised AIN/GaN superlattices (SLs). From atomic force microscope measurement, the root-mean-square value of the surface morphology was only 0.35 nm, and no crack was found on the surface. The dislocation density was estimated to be as low as 2×108 cm -2. X-ray and transmission electron microscope data show the grown MQW has shape interface with good periodicity. The sample has a deep UV photoluminescence emission at 334 nm (3.71 eV) with a very narrow linewidth of 45 meV at 13K. The cathodoluminescence image show fairly uniform luminescence pattern at room temperature. In conclusion, the AlGaN/GaN MQW grown by ALD technique should be useful for providing high crystalline quality AlGaN/GaN-based MQW for fabrication of AlGaN/GaN-based UV light emitting devices such as light emitting diodes and lasers.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium Proceedings - Advances in GaN, GaAs, SiC and Related Alloys on Silicon Substrates
Pages101-106
Number of pages6
StatePublished - 18 Dec 2008
EventAdvances in GaN, GaAs, SiC and Related Alloys on Silicon Substrates - San Francisco, CA, United States
Duration: 24 Mar 200828 Mar 2008

Publication series

NameMaterials Research Society Symposium Proceedings
Volume1068
ISSN (Print)0272-9172

Conference

ConferenceAdvances in GaN, GaAs, SiC and Related Alloys on Silicon Substrates
CountryUnited States
CitySan Francisco, CA
Period24/03/0828/03/08

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