AlGaN/GaN multiple quantum wells grown by atomic-layer deposition

M. H. Lo, Z. Y. Li, J. R. Chen, T. S. Ko, Tien-chang Lu, Hao-Chung Kuo, S. C. Wang

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

A three-pair AlGaN/GaN multiple quantum well (MQW) structure with superlattices (SLs) was grown on c-plane sapphire using metal organic chemical vapor deposition (MOCVD) system. The AlGaN barrier and GaN well of the MQW structure were grown by atomic layer deposition (ALD) and conventional growth, respectively. The HRTEM and HRXRD results show the grown structure has shape interface between SLs layers and QWs with good periodicity. The AFM and SEM data show smooth surface morphology with low RMS value and low defect density. The CL measurements also indicate uniform luminescence pattern at room temperature. The AlGaN/GaN MQW with AlN/GaN SLs structure grown by ALD could be used to improve the surface morphology by effectively suppress the threading dislocation.

Original languageEnglish
Title of host publicationGallium Nitride Materials and Devices III
DOIs
StatePublished - 23 Apr 2008
EventSociety of Photo-Optical Instrumentation Engineers (SPIE) - San Jose, CA, United States
Duration: 21 Jan 200824 Jan 2008

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume6894
ISSN (Print)0277-786X

Conference

ConferenceSociety of Photo-Optical Instrumentation Engineers (SPIE)
CountryUnited States
CitySan Jose, CA
Period21/01/0824/01/08

Keywords

  • AlGaN
  • Atomic layer deposition
  • Quantum well
  • UV

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