AlGaN/GaN high electron mobility transistors with a low sub-threshold swing on free-standing GaN wafer

Xinke Liu, Hong Gu, Kuilong Li, Lunchun Guo, Deliang Zhu, Youming Lu, Jianfeng Wang, Hao-Chung Kuo, Zhihong Liu, Wenjun Liu, Lin Chen, Jianping Fang, Kah Wee Ang, Ke Xu, Jin Ping Ao

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

This paper reported AlGaN/GaN high electron mobility transistors (HEMTs) with low sub-threshold swing SS on free-standing GaN wafer. High quality AlGaN/GaN epi-layer has been grown by metal-organic chemical vapor deposition (MOCVD) on free-standing GaN, small full-width hall maximum (FWHM) of 42.9 arcsec for (0002) GaN XRD peaks and ultralow dislocation density (∼104-105 cm-2) were obtained. Due to these extremely high quality material properties, the fabricated AlGaN/GaN HEMTs achieve a low SS (∼60 mV/decade), low hysteresis of 54 mV, and high peak electron mobility μeff of ∼1456 cm2V-1s-1. Systematic study of materials properties and device characteristics exhibits that GaN-on-GaN AlGaN/GaN HEMTs are promising candidate for next generation high power device applications.

Original languageEnglish
Article number095305
JournalAIP Advances
Volume7
Issue number9
DOIs
StatePublished - 1 Sep 2017

Fingerprint Dive into the research topics of 'AlGaN/GaN high electron mobility transistors with a low sub-threshold swing on free-standing GaN wafer'. Together they form a unique fingerprint.

Cite this