AlGalnAs quantum-well saturable absorbers for a diode-pumped passively Q-switched Nd:YV04 laser at 1064 nm

S. C. Huang, H. L. Chang, Kuan-Wei Su, Yung-Fu Chen, K. F. Haung

Research output: Contribution to journalConference article

Abstract

We report the use of AlGalnAs quantum wells (QWs) as a saturable absorber in the Q-switching of a high-power diode-pumped Nd-doped 1064nm laser. The barrier layers are designed to locate the QW groups in the region of the nodes of the lasing standing wave for avoiding damage. With an incident pump power of 22 W at 878nm, an average output power of 6.8 W with a Q-switched pulse width of 0.85 ns at a pulse repetition rate of 105kHz was obtained.

Original languageEnglish
Article number71351T
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume7135
DOIs
StatePublished - 1 Dec 2008
EventOptoelectronic Materials and Devices III - Hangzhou, China
Duration: 27 Oct 200830 Oct 2008

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