AlGaInP/mirror/Si light-emitting diodes with vertical electrodes by wafer bonding

Ray-Hua Horng*, S. H. Huang, D. S. Wuu, C. Y. Chiu

*Corresponding author for this work

Research output: Contribution to journalArticle

20 Scopus citations

Abstract

The AlGaInP/mirror/Si light-emitting diodes (LED) with vertical electrodes were proposed by wafer bonding. AuBe thickness was found to possess a large effect on the final performance of mirror substrates (MS)-LEDs due to the difference in the interdiffusion of Be atoms in each mirror structure. The results indicated that the MS structure was applied to produce vertical-electrode AlGaInP/Si LEDs with same efficiency as the planar ones.

Original languageEnglish
Pages (from-to)4011-4013
Number of pages3
JournalApplied Physics Letters
Volume82
Issue number23
DOIs
StatePublished - 9 Jun 2003

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