AlGaInP light-emitting diodes with mirror substrates fabricated by wafer bonding

Ray-Hua Horng*, D. S. Wuu, S. C. Wei, C. Y. Tseng, M. F. Huang, K. H. Chang, P. H. Liu, K. C. Lin

*Corresponding author for this work

Research output: Contribution to journalArticle

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Abstract

An AlGaInP light-emitting diode (LED) with a Au/AuBe/SiO2/Si mirror substrate has been fabricated using wafer bonding. The bonded mirror-substrate LED is capable of emitting luminous intensity of 90 and 205 mcd under 20 and 50 mA injection, respectively. The emission wavelength was found to be independent of the injection current. This feature is attributed to the Si substrate providing a good heat sink.

Original languageEnglish
Pages (from-to)3054-3056
Number of pages3
JournalApplied Physics Letters
Volume75
Issue number20
DOIs
StatePublished - 15 Nov 1999

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    Horng, R-H., Wuu, D. S., Wei, S. C., Tseng, C. Y., Huang, M. F., Chang, K. H., Liu, P. H., & Lin, K. C. (1999). AlGaInP light-emitting diodes with mirror substrates fabricated by wafer bonding. Applied Physics Letters, 75(20), 3054-3056. https://doi.org/10.1063/1.125228