AlGaInP light-emitting diodes with mirror substrates fabricated by wafer bonding

Ray-Hua Horng; D. S. Wuu; S. C. Wei; C. Y. Tseng; M. F. Huang; K. H. Chang; P. H. Liu; K. C. Lin

doi:10.1063/1.125228

AlGaInP light-emitting diodes with mirror substrates fabricated by wafer bonding

Ray-Hua Horng^*, D. S. Wuu, S. C. Wei, C. Y. Tseng, M. F. Huang, K. H. Chang, P. H. Liu, K. C. Lin

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to journal › Article

43 Scopus citations

Abstract

An AlGaInP light-emitting diode (LED) with a Au/AuBe/SiO₂/Si mirror substrate has been fabricated using wafer bonding. The bonded mirror-substrate LED is capable of emitting luminous intensity of 90 and 205 mcd under 20 and 50 mA injection, respectively. The emission wavelength was found to be independent of the injection current. This feature is attributed to the Si substrate providing a good heat sink.

Original language	English
Pages (from-to)	3054-3056
Number of pages	3
Journal	Applied Physics Letters
Volume	75
Issue number	20
DOIs	https://doi.org/10.1063/1.125228
State	Published - 15 Nov 1999

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Horng, R-H., Wuu, D. S., Wei, S. C., Tseng, C. Y., Huang, M. F., Chang, K. H., Liu, P. H., & Lin, K. C. (1999). AlGaInP light-emitting diodes with mirror substrates fabricated by wafer bonding. Applied Physics Letters, 75(20), 3054-3056. https://doi.org/10.1063/1.125228

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abstract = "An AlGaInP light-emitting diode (LED) with a Au/AuBe/SiO2/Si mirror substrate has been fabricated using wafer bonding. The bonded mirror-substrate LED is capable of emitting luminous intensity of 90 and 205 mcd under 20 and 50 mA injection, respectively. The emission wavelength was found to be independent of the injection current. This feature is attributed to the Si substrate providing a good heat sink.",

author = "Ray-Hua Horng and Wuu, {D. S.} and Wei, {S. C.} and Tseng, {C. Y.} and Huang, {M. F.} and Chang, {K. H.} and Liu, {P. H.} and Lin, {K. C.}",

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AU - Horng, Ray-Hua

AU - Wuu, D. S.

AU - Wei, S. C.

AU - Tseng, C. Y.

AU - Huang, M. F.

AU - Chang, K. H.

AU - Liu, P. H.

AU - Lin, K. C.

PY - 1999/11/15

Y1 - 1999/11/15

N2 - An AlGaInP light-emitting diode (LED) with a Au/AuBe/SiO2/Si mirror substrate has been fabricated using wafer bonding. The bonded mirror-substrate LED is capable of emitting luminous intensity of 90 and 205 mcd under 20 and 50 mA injection, respectively. The emission wavelength was found to be independent of the injection current. This feature is attributed to the Si substrate providing a good heat sink.

AB - An AlGaInP light-emitting diode (LED) with a Au/AuBe/SiO2/Si mirror substrate has been fabricated using wafer bonding. The bonded mirror-substrate LED is capable of emitting luminous intensity of 90 and 205 mcd under 20 and 50 mA injection, respectively. The emission wavelength was found to be independent of the injection current. This feature is attributed to the Si substrate providing a good heat sink.

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DO - 10.1063/1.125228

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JF - Applied Physics Letters

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