AlGaInP LED with copper substrate has been successfully fabricated by the wafer bonding technique in this study. It was found that bonded AlGaInP LED devices could be operated in a higher injection forward current above 500mA. Such bonding enhanced the device performance significantly. The joule heating exhibiting in conventional LEDs was eliminated because the copper substrate provided a good heat sink, Thus, the thermal degradation of the conventional LEDs was improved.
|Number of pages||10|
|State||Published - 1 Dec 2003|
- AlGaInP LED
- Copper substrate
- Wafer bonded