AlGaInAs multiple-quantum-well 1.2-μm semiconductor laser in-well pumped by an Yb-doped pulsed fiber amplifier

Y. F. Chen, Y. C. Lee, S. C. Huang, Kai-Feng Huang, Yung-Fu Chen*

*Corresponding author for this work

Research output: Contribution to journalArticle

Abstract

An AlGaInAs multiple quantum well structure is reported as an effective gain medium of the in-well pumped high-peak-power semiconductor disk laser at 1.2 μm. We use an Yb-doped pulsed fiber amplifier as the pump source to effectively optimize the output characteristics. The maximum average output power of 1.28 W and peak output power of 0.76 kW is obtained at 1225 nm lasing wavelength under 60 kHz pump repetition rate and 28 ns pump pulse width.

Original languageEnglish
Pages (from-to)57-62
Number of pages6
JournalApplied Physics B: Lasers and Optics
Volume106
Issue number1
DOIs
StatePublished - 1 Jan 2012

Fingerprint Dive into the research topics of 'AlGaInAs multiple-quantum-well 1.2-μm semiconductor laser in-well pumped by an Yb-doped pulsed fiber amplifier'. Together they form a unique fingerprint.

Cite this