Al0.12Ga0.88As/In0.18Ga0.82As high-electron-mobility transistor (HEMT) growth on a Si substrate using the Ge/GexSi1-x buffer is demonstrated. This is the first demonstration of Al0.12Ga0.88As/In0.18Ga 0.82As HEMT growth on a Ge/GexSi1-x metamorphic buffer layer. The electron mobility in the In0.18Ga0.82As channel of the HEMT sample was 3,550cm2/(V·s). After fabrication, the HEMT device demonstrated a saturation current of 150mA/mm with a transconductance of 155 mS/ mm. The well behaved characteristics of the HEMT device on the Si substrate are believed to be due to the very thin buffer layer achieved and the lack of the antiphase boundary (APB) formation and Ge diffusion into the GaAs layers.
- GaAs on Si
- SiGe buffer layer