AlGaAs/GaAs Pnp HBTs with high fmax and ft

G. J. Sullivan*, Mau-Chung Chang, N. H. Sheng, R. J. Anderson, N. L. Wang, K. C. Wang, J. A. Higgins, P. M. Asbeck

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

AlGaAs/GaAs Pnp HBTs have the potential for high frequency performance approaching that of Npn HBTs. To achieve this performance, it is necessary to dope the base as heavily n-type as possible. This heavy base doping results in large degeneracy in the base, which reduces the heterobarrier to reverse injection of electrons from the base into the emitter. High Al content in the emitter is desirable to maintain good injection efficiency. Incorporating a gradient in the base doping can introduce fields to sweep injected holes across the neutral base region, which reduces base transport time. DC and RF characteristics of Pnp HBTs with 40% and 75% Al in the emitter will be presented. ft of 17 GHz and fmax of 39 GHz has been achieved in 2 μm × 11 μm HBTs fabricated using a self-aligned ohmic contact process. Further improvement in performance should be possible.

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsLester F. Eastman
PublisherPubl by Int Soc for Optical Engineering
Pages106-112
Number of pages7
ISBN (Print)0819403393
DOIs
StatePublished - 1 Dec 1990
EventHigh-Speed Electronics and Device Scaling - San Diego, CA, USA
Duration: 18 Mar 199019 Mar 1990

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume1288
ISSN (Print)0277-786X

Conference

ConferenceHigh-Speed Electronics and Device Scaling
CitySan Diego, CA, USA
Period18/03/9019/03/90

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    Sullivan, G. J., Chang, M-C., Sheng, N. H., Anderson, R. J., Wang, N. L., Wang, K. C., Higgins, J. A., & Asbeck, P. M. (1990). AlGaAs/GaAs Pnp HBTs with high fmax and ft. In L. F. Eastman (Ed.), Proceedings of SPIE - The International Society for Optical Engineering (pp. 106-112). (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 1288). Publ by Int Soc for Optical Engineering. https://doi.org/10.1117/12.20911