AlGaAs/GaAs Npn heterojunction bipolar transistors grown on Si (311) by molecular beam epitaxy

M. J. Jurkovic*, J. Alperin, Q. Du, W. I. Wang, Mau-Chung Chang

*Corresponding author for this work

Research output: Contribution to journalArticle

4 Scopus citations

Abstract

AlGaAs/GaAs Npn heterojunction bipolar transistors have been grown by molecular beam epitaxy on Si (311) substrates utilizing a GaAs buffer layer as thin as 2 μm and fabricated using a self-aligned base contact process. Reflection high-energy electron diffraction patterns correspond with antiphase domain-free growth. Direct current measurements for a 70×70 μm2 device reveal a small-signal common-emitter current gain of 10 and collector-emitter breakdown of 13 V at a collector current of 1.8 kA/cm2. These results indicate that further optimization in growth technique may render the growth of GaAs-on-Si (311) a viable candidate for application in high-power integration.

Original languageEnglish
Pages (from-to)1401-1403
Number of pages3
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume16
Issue number3
DOIs
StatePublished - 1 May 1998

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