AlGaAs-GaAs and AlGaAs-GaAs-InGaAs vertical cavity surface emitting lasers with Ag mirrors

D. G. Deppe*, A. Y. Cho, Kai-Feng Huang, R. J. Fischer, K. Tai, E. F. Schubert, Jenn-Fang Chen

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

We describe vertical cavity surface emitting lasers of GaAs active regions (0.7 μm thick) emitting at 0.85 μm and of In0.1Ga 0.9As-GaAs active regions emitting at 0.90 μm. The vertical cavity is formed using an AlxGa1-xAs-AlAs quarter-wave stack as the n-type mirror and the metal Ag as the p-type mirror. The Ag mirror has potential for reduced series resistance, reduced thermal resistance, and more simplified device processing over other mirror structures for vertical cavity laser diodes. Current thresholds for pulsed room-temperature operation as low as 16 kA/cm2 for the GaAs and 51 kA/cm2 for the In 0.1Ga0.9As-GaAs devices have been measured.

Original languageEnglish
Pages (from-to)5629-5631
Number of pages3
JournalJournal of Applied Physics
Volume66
Issue number11
DOIs
StatePublished - 1 Dec 1989

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