Al x Ga 1-x N/GaN heterostructure field effect transistors with various Al mole fractions in AlGaN barrier

W. S. Chen, S. J. Chang*, Y. K. Su, R. L. Wang, Cheng-Huang Kuo, S. C. Shei

*Corresponding author for this work

Research output: Contribution to journalArticle

5 Scopus citations

Fingerprint Dive into the research topics of 'Al <sub>x</sub> Ga <sub>1-x</sub> N/GaN heterostructure field effect transistors with various Al mole fractions in AlGaN barrier'. Together they form a unique fingerprint.

Chemical Compounds

Engineering & Materials Science

Physics & Astronomy