Al x Ga 1-x N/GaN heterostructure field effect transistors with various Al mole fractions in AlGaN barrier

W. S. Chen, S. J. Chang*, Y. K. Su, R. L. Wang, Cheng-Huang Kuo, S. C. Shei

*Corresponding author for this work

Research output: Contribution to journalArticle

5 Scopus citations

Abstract

Al x Ga 1-x N/GaN heterostructure field-effect transistors (HFETs) with different Al mole fractions were grown on sapphire substrates. With a 5-nm-thick undoped Al x Ga 1-x N spacer layer and a 14-nm-thick Si-doped Al x Ga 1- x N layer, it was found that we achieved the largest product value of sheet carrier concentration and electron mobility from the sample with an Al mole fraction of 0.32. Due to the insertion of an Mg-doped GaN layer, it was found that all samples exhibit good pinch-off characteristics. With a 1-μm-gate length, the measured saturation I DS were 207, 270, 430, and 355 mA/mm while the maximum g m were 84, 129, 165, and 137 mS/mm for samples with an Al composition of 0.22, 0.26, 0.32 and 0.36, respectively.

Original languageEnglish
Pages (from-to)398-403
Number of pages6
JournalJournal of Crystal Growth
Volume275
Issue number3-4
DOIs
StatePublished - 1 Mar 2005

Keywords

  • Al composition
  • AlGaN/GaN
  • HFET
  • Mg-doped layer

Fingerprint Dive into the research topics of 'Al <sub>x</sub> Ga <sub>1-x</sub> N/GaN heterostructure field effect transistors with various Al mole fractions in AlGaN barrier'. Together they form a unique fingerprint.

  • Cite this