Al 2 O 3 -Ge-On-Insulator n- and p-MOSFETs With Fully NiSi and NiGe Dual Gates

D. S. Yu; C. H. Huang; Albert Chin; Chunxiang Zhu; M. F. Li; Byung Jin Cho; Dim Lee Kwong

doi:10.1109/LED.2004.824249

Al ₂ O ₃ -Ge-On-Insulator n- and p-MOSFETs With Fully NiSi and NiGe Dual Gates

D. S. Yu^*, C. H. Huang, Albert Chin, Chunxiang Zhu, M. F. Li, Byung Jin Cho, Dim Lee Kwong

^*Corresponding author for this work

Department of Electronics Engineering

Research output: Contribution to journal › Article

59 Scopus citations

Abstract

High-κ Al ₂ O ₃ /Ge-on-insulator (GOI) n- and p-MOSFETs with fully silicided NiSi and germanided NiGe dual gates were fabricated. At 1.7-nm equivalent-oxide-thickness (EOT), the A1 ₂ O ₃ -GOI with metal-like NiSi and NiGe gates has comparable gate leakage current with Al ₂ O ₃ -Si MOSFETs. Additionally, A1 ₂ O ₃ -GOI C-MOSFETs with fully NiSi and NiGe gates show 1.94 and 1.98 times higher electron and hole mobility, respectively, than Al ₂ O ₃ -Si devices, because the electron and hole effective masses of Ge are lower than those of Si. The process with maximum 500°C rapid thermal annealing (RTA) is ideal for integrating metallic gates with high-κ to minimize interfacial reactions and crystallization of the high-κ material, and oxygen penetration in high-κ MOSFETs.

Original language	English
Pages (from-to)	138-140
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	25
Issue number	3
DOIs	https://doi.org/10.1109/LED.2004.824249
State	Published - 1 Mar 2004

Keywords

Ge
Ge-on-insulator (GOI)
MOSFET
NiGe
NiSi

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10.1109/LED.2004.824249

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Yu, D. S., Huang, C. H., Chin, A., Zhu, C., Li, M. F., Cho, B. J., & Kwong, D. L. (2004). Al ₂ O ₃ -Ge-On-Insulator n- and p-MOSFETs With Fully NiSi and NiGe Dual Gates. IEEE Electron Device Letters, 25(3), 138-140. https://doi.org/10.1109/LED.2004.824249

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title = "Al 2 O 3 -Ge-On-Insulator n- and p-MOSFETs With Fully NiSi and NiGe Dual Gates",

abstract = " High-κ Al 2 O 3 /Ge-on-insulator (GOI) n- and p-MOSFETs with fully silicided NiSi and germanided NiGe dual gates were fabricated. At 1.7-nm equivalent-oxide-thickness (EOT), the A1 2 O 3 -GOI with metal-like NiSi and NiGe gates has comparable gate leakage current with Al 2 O 3 -Si MOSFETs. Additionally, A1 2 O 3 -GOI C-MOSFETs with fully NiSi and NiGe gates show 1.94 and 1.98 times higher electron and hole mobility, respectively, than Al 2 O 3 -Si devices, because the electron and hole effective masses of Ge are lower than those of Si. The process with maximum 500°C rapid thermal annealing (RTA) is ideal for integrating metallic gates with high-κ to minimize interfacial reactions and crystallization of the high-κ material, and oxygen penetration in high-κ MOSFETs. ",

keywords = "Ge, Ge-on-insulator (GOI), MOSFET, NiGe, NiSi",

author = "Yu, {D. S.} and Huang, {C. H.} and Albert Chin and Chunxiang Zhu and Li, {M. F.} and Cho, {Byung Jin} and Kwong, {Dim Lee}",

year = "2004",

month = mar,

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doi = "10.1109/LED.2004.824249",

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T1 - Al 2 O 3 -Ge-On-Insulator n- and p-MOSFETs With Fully NiSi and NiGe Dual Gates

AU - Yu, D. S.

AU - Huang, C. H.

AU - Chin, Albert

AU - Zhu, Chunxiang

AU - Li, M. F.

AU - Cho, Byung Jin

AU - Kwong, Dim Lee

PY - 2004/3/1

Y1 - 2004/3/1

N2 - High-κ Al 2 O 3 /Ge-on-insulator (GOI) n- and p-MOSFETs with fully silicided NiSi and germanided NiGe dual gates were fabricated. At 1.7-nm equivalent-oxide-thickness (EOT), the A1 2 O 3 -GOI with metal-like NiSi and NiGe gates has comparable gate leakage current with Al 2 O 3 -Si MOSFETs. Additionally, A1 2 O 3 -GOI C-MOSFETs with fully NiSi and NiGe gates show 1.94 and 1.98 times higher electron and hole mobility, respectively, than Al 2 O 3 -Si devices, because the electron and hole effective masses of Ge are lower than those of Si. The process with maximum 500°C rapid thermal annealing (RTA) is ideal for integrating metallic gates with high-κ to minimize interfacial reactions and crystallization of the high-κ material, and oxygen penetration in high-κ MOSFETs.

AB - High-κ Al 2 O 3 /Ge-on-insulator (GOI) n- and p-MOSFETs with fully silicided NiSi and germanided NiGe dual gates were fabricated. At 1.7-nm equivalent-oxide-thickness (EOT), the A1 2 O 3 -GOI with metal-like NiSi and NiGe gates has comparable gate leakage current with Al 2 O 3 -Si MOSFETs. Additionally, A1 2 O 3 -GOI C-MOSFETs with fully NiSi and NiGe gates show 1.94 and 1.98 times higher electron and hole mobility, respectively, than Al 2 O 3 -Si devices, because the electron and hole effective masses of Ge are lower than those of Si. The process with maximum 500°C rapid thermal annealing (RTA) is ideal for integrating metallic gates with high-κ to minimize interfacial reactions and crystallization of the high-κ material, and oxygen penetration in high-κ MOSFETs.

KW - Ge

KW - Ge-on-insulator (GOI)

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KW - NiSi

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