Abstract
High-κ Al 2 O 3 /Ge-on-insulator (GOI) n- and p-MOSFETs with fully silicided NiSi and germanided NiGe dual gates were fabricated. At 1.7-nm equivalent-oxide-thickness (EOT), the A1 2 O 3 -GOI with metal-like NiSi and NiGe gates has comparable gate leakage current with Al 2 O 3 -Si MOSFETs. Additionally, A1 2 O 3 -GOI C-MOSFETs with fully NiSi and NiGe gates show 1.94 and 1.98 times higher electron and hole mobility, respectively, than Al 2 O 3 -Si devices, because the electron and hole effective masses of Ge are lower than those of Si. The process with maximum 500°C rapid thermal annealing (RTA) is ideal for integrating metallic gates with high-κ to minimize interfacial reactions and crystallization of the high-κ material, and oxygen penetration in high-κ MOSFETs.
Original language | English |
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Pages (from-to) | 138-140 |
Number of pages | 3 |
Journal | IEEE Electron Device Letters |
Volume | 25 |
Issue number | 3 |
DOIs | |
State | Published - 1 Mar 2004 |
Keywords
- Ge
- Ge-on-insulator (GOI)
- MOSFET
- NiGe
- NiSi