Al-SiO2-Y2O3-SiO2-poly-si thin-film transistor nonvolatile memory incorporating a Y2O 3 charge trapping layer

Tung Ming Pan, Li Chen Yen, Somnath Mondal, Chieh Ting Lo, Tien-Sheng Chao

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In this letter, we investigate the structural properties and electrical characteristics of the Al-SiO2-Y2O3-SiO2-poly-Si (AOYOP) thin-film transistor (TFT) nonvolatile memory device. The composition of Y2O3 charge-trapping layer was analyzed using X-ray photoelectron spectroscopy. The Y2O3 AOYOP TFT memory device exhibited a large memory window of 2.5 V, a long charge retention time of ten years with a minimal charge loss of ?15%, and a better endurance performance for P/E cycles up to 105.

Original languageEnglish
JournalECS Solid State Letters
Issue number10
StatePublished - 26 Jul 2013

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