Air stable ambipolar organic field-effect transistors and complementary-like inverters prepared with surface-modified gate dielectrics

Fang-Chung Chen*, Yu Jen Huang

*Corresponding author for this work

Research output: Contribution to journalArticle

7 Scopus citations

Abstract

Air stable ambipolar organic field-effect transistors containing p/n heterojunctions are achieved by passivating the electron trapping sites on the SiO2 surface. The morphology of the heterojunctions is controlled by the film thicknesses of p- and n-channel semiconductors, thereby affecting the device air stability and the electrical characteristics. Further, air stable complementary-like inverters, which are able to work both in the first and the third quadrants with a high gain up to 30, are also demonstrated.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume12
Issue number7
DOIs
StatePublished - 28 Aug 2009

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