Air-spacer self-aligned contact MOSFET for future dense memories

Jemin Park; Chen-Ming Hu

doi:10.1109/SISPAD.2008.4648300

Air-spacer self-aligned contact MOSFET for future dense memories

Jemin Park^*, Chen-Ming Hu

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Contribution to conference › Paper › peer-review

Abstract

An air-spacer SAC (Self-Aligned Contact) transistor is proposed. Air-spacer is created by removing the nitride spacer after the SAC plug has been formed. 3D mixed mode simulation shows that the 35% area benefit can be retained while improving the speed to be 10% better than a non-SAC device and switching energy to 82%.

Original language	English
Pages	313-316
Number of pages	4
DOIs	https://doi.org/10.1109/SISPAD.2008.4648300
State	Published - 1 Dec 2008
Event	2008 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2008 - Hakone, Japan Duration: 9 Sep 2008 → 11 Sep 2008

Conference

Conference	2008 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2008
Country	Japan
City	Hakone
Period	9/09/08 → 11/09/08

Access to Document

10.1109/SISPAD.2008.4648300

Fingerprint Dive into the research topics of 'Air-spacer self-aligned contact MOSFET for future dense memories'. Together they form a unique fingerprint.

Cite this

@conference{15d5e9dcd0a748c5845ffd681b175e97,

title = "Air-spacer self-aligned contact MOSFET for future dense memories",

abstract = "An air-spacer SAC (Self-Aligned Contact) transistor is proposed. Air-spacer is created by removing the nitride spacer after the SAC plug has been formed. 3D mixed mode simulation shows that the 35% area benefit can be retained while improving the speed to be 10% better than a non-SAC device and switching energy to 82%.",

author = "Jemin Park and Chen-Ming Hu",

year = "2008",

month = dec,

day = "1",

doi = "10.1109/SISPAD.2008.4648300",

language = "English",

pages = "313--316",

note = "null ; Conference date: 09-09-2008 Through 11-09-2008",

}

TY - CONF

T1 - Air-spacer self-aligned contact MOSFET for future dense memories

AU - Park, Jemin

AU - Hu, Chen-Ming

PY - 2008/12/1

Y1 - 2008/12/1

N2 - An air-spacer SAC (Self-Aligned Contact) transistor is proposed. Air-spacer is created by removing the nitride spacer after the SAC plug has been formed. 3D mixed mode simulation shows that the 35% area benefit can be retained while improving the speed to be 10% better than a non-SAC device and switching energy to 82%.

AB - An air-spacer SAC (Self-Aligned Contact) transistor is proposed. Air-spacer is created by removing the nitride spacer after the SAC plug has been formed. 3D mixed mode simulation shows that the 35% area benefit can be retained while improving the speed to be 10% better than a non-SAC device and switching energy to 82%.

UR - http://www.scopus.com/inward/record.url?scp=67650348280&partnerID=8YFLogxK

U2 - 10.1109/SISPAD.2008.4648300

DO - 10.1109/SISPAD.2008.4648300

M3 - Paper

AN - SCOPUS:67650348280

SP - 313

EP - 316

Y2 - 9 September 2008 through 11 September 2008

ER -