Abstract
An air-spacer SAC (Self-Aligned Contact) transistor is proposed. Air-spacer is created by removing the nitride spacer after the SAC plug has been formed. 3D mixed mode simulation shows that the 35% area benefit can be retained while improving the speed to be 10% better than a non-SAC device and switching energy to 82%.
Original language | English |
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Pages | 313-316 |
Number of pages | 4 |
DOIs | |
State | Published - 1 Dec 2008 |
Event | 2008 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2008 - Hakone, Japan Duration: 9 Sep 2008 → 11 Sep 2008 |
Conference
Conference | 2008 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2008 |
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Country | Japan |
City | Hakone |
Period | 9/09/08 → 11/09/08 |