Air-spacer self-aligned contact MOSFET for future dense memories

Jemin Park*, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to conference › Paper

Abstract

An air-spacer SAC (Self-Aligned Contact) transistor is proposed. Air-spacer is created by removing the nitride spacer after the SAC plug has been formed. 3D mixed mode simulation shows that the 35% area benefit can be retained while improving the speed to be 10% better than a non-SAC device and switching energy to 82%.

Original languageEnglish
Pages313-316
Number of pages4
DOIs
StatePublished - 1 Dec 2008
Event2008 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2008 - Hakone, Japan
Duration: 9 Sep 2008 → 11 Sep 2008

Conference

Conference2008 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2008
CountryJapan
CityHakone
Period9/09/08 → 11/09/08

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    Park, J., & Hu, C-M. (2008). Air-spacer self-aligned contact MOSFET for future dense memories. 313-316. Paper presented at 2008 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2008, Hakone, Japan. https://doi.org/10.1109/SISPAD.2008.4648300