An air-spacer SAC (Self-Aligned Contact) transistor is proposed. Air-spacer is created by removing the nitride spacer after the SAC plug has been formed. 3D mixed mode simulation shows that the 35% area benefit can be retained while improving the speed to be 10% better than a non-SAC device and switching energy to 82%.
|Number of pages||4|
|State||Published - 1 Dec 2008|
|Event||2008 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2008 - Hakone, Japan|
Duration: 9 Sep 2008 → 11 Sep 2008
|Conference||2008 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2008|
|Period||9/09/08 → 11/09/08|