AIGaAs/lnGaAs/GaAs Strained-Layer Heterojunction Bipolar Transistors by Molecular Beam Epitaxy

G. J. Sullivan, P. M. Asbeck, Mau-Chung Chang, D. L. Miller, K. C. Wang

Research output: Contribution to journalArticlepeer-review

13 Scopus citations

Abstract

The growth and characteristics of the first AlGaAs/InGaAs/GaAs HBTs are reported. Layers with up to 10% indium content appeared to be free of misfit dislocations, and resulted in HBTs with good I/V characteristics which scaled with In content according to theory.

Original languageEnglish
Pages (from-to)419-421
Number of pages3
JournalElectronics Letters
Volume22
Issue number8
DOIs
StatePublished - 1 Jan 1986

Keywords

  • Bipolar transistors
  • Molecular beam epitaxy
  • Semiconductor devices and materials

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