Aigaas/Gaas Heterojunction Bipolar Transistor circuits with Improved High-Speed Performance

Mau-Chung Chang, P. M. Asbeck, K. C. Wang, G. J. Sullivan, D. L. Miller

Research output: Contribution to journalArticlepeer-review

20 Scopus citations

Abstract

Using a self-aligned base contact process and proton implantation to reduce extrinsic base-collector capacitance, we have improved the high-speed performance of AlGaAs/ GaAs heterojunction bipolar transistor digital circuits. The cutoff frequency of the transistor fT with an emitter width of 2 0 μm is 45 GHz. NTL ring oscillators have operated at 16-5 ps/gate and CML ring oscillators at 27.6 ps/gate. Frequency dividers (1/4) have operated up to 11 GHz with wafer-probe testing. These are record speeds for bipolar circuits.

Original languageEnglish
Pages (from-to)1173-1174
Number of pages2
JournalElectronics Letters
Volume22
Issue number22
DOIs
StatePublished - 1 Jan 1986

Keywords

  • Digital circuits
  • Semiconductor devices and materials

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