Abstract
InGaN/GaN light-emitting diodes (LEDs) with graded-composition AlGaN/GaN superlattice (SL) electron blocking layer (EBL) were designed and grown by metal-organic chemical vapor deposition. The simulation results demonstrated that the LED with a graded-composition AlGaN/GaN SL EBL have superior hole injection efficiency and lower electron leakage over the LED with a conventional AlGaN EBL or normal AlGaN/GaN SL EBL. Therefore, the efficiency droop can be alleviated to be ~20%from maximum at an injection current of 15-120 mA, which is smaller than that for conventional AlGaN EBL (30%). The corresponding experimental results also confirm that the use of a graded-composition AlGaN/GaN SL EBL can markedly enhance the light output power by 60%.
Original language | English |
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Article number | 6589944 |
Pages (from-to) | 2062-2065 |
Number of pages | 4 |
Journal | IEEE Photonics Technology Letters |
Volume | 25 |
Issue number | 21 |
DOIs | |
State | Published - 21 Oct 2013 |
Keywords
- Light-emitting diodes (LEDs)
- quantum well (QWs)
- superlattice (SL)