Advantages of blue LEDs with graded-composition AlGaN/GaN superlattice EBL

Bing Cheng Lin; Kuo Ju Chen; Hau Vei Han; Yu-Pin Lan; Ching Hsueh Chiu; Chien-Chung Lin; Min Hsiung Shih; Po-Tsung Lee; Hao-Chung Kuo

doi:10.1109/LPT.2013.2281068

Advantages of blue LEDs with graded-composition AlGaN/GaN superlattice EBL

Bing Cheng Lin, Kuo Ju Chen, Hau Vei Han, Yu-Pin Lan, Ching Hsueh Chiu, Chien-Chung Lin, Min Hsiung Shih, Po-Tsung Lee, Hao-Chung Kuo

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

InGaN/GaN light-emitting diodes (LEDs) with graded-composition AlGaN/GaN superlattice (SL) electron blocking layer (EBL) were designed and grown by metal-organic chemical vapor deposition. The simulation results demonstrated that the LED with a graded-composition AlGaN/GaN SL EBL have superior hole injection efficiency and lower electron leakage over the LED with a conventional AlGaN EBL or normal AlGaN/GaN SL EBL. Therefore, the efficiency droop can be alleviated to be ~20%from maximum at an injection current of 15-120 mA, which is smaller than that for conventional AlGaN EBL (30%). The corresponding experimental results also confirm that the use of a graded-composition AlGaN/GaN SL EBL can markedly enhance the light output power by 60%.

Original language	English
Article number	6589944
Pages (from-to)	2062-2065
Number of pages	4
Journal	IEEE Photonics Technology Letters
Volume	25
Issue number	21
DOIs	https://doi.org/10.1109/LPT.2013.2281068
State	Published - 21 Oct 2013

Keywords

Light-emitting diodes (LEDs)
quantum well (QWs)
superlattice (SL)

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title = "Advantages of blue LEDs with graded-composition AlGaN/GaN superlattice EBL",

abstract = "InGaN/GaN light-emitting diodes (LEDs) with graded-composition AlGaN/GaN superlattice (SL) electron blocking layer (EBL) were designed and grown by metal-organic chemical vapor deposition. The simulation results demonstrated that the LED with a graded-composition AlGaN/GaN SL EBL have superior hole injection efficiency and lower electron leakage over the LED with a conventional AlGaN EBL or normal AlGaN/GaN SL EBL. Therefore, the efficiency droop can be alleviated to be ~20%from maximum at an injection current of 15-120 mA, which is smaller than that for conventional AlGaN EBL (30%). The corresponding experimental results also confirm that the use of a graded-composition AlGaN/GaN SL EBL can markedly enhance the light output power by 60%.",

keywords = "Light-emitting diodes (LEDs), quantum well (QWs), superlattice (SL)",

author = "Lin, {Bing Cheng} and Chen, {Kuo Ju} and Han, {Hau Vei} and Yu-Pin Lan and Chiu, {Ching Hsueh} and Chien-Chung Lin and Shih, {Min Hsiung} and Po-Tsung Lee and Hao-Chung Kuo",

year = "2013",

month = oct,

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doi = "10.1109/LPT.2013.2281068",

language = "English",

volume = "25",

pages = "2062--2065",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "21",

}

Advantages of blue LEDs with graded-composition AlGaN/GaN superlattice EBL. / Lin, Bing Cheng; Chen, Kuo Ju; Han, Hau Vei; Lan, Yu-Pin; Chiu, Ching Hsueh; Lin, Chien-Chung; Shih, Min Hsiung; Lee, Po-Tsung ; Kuo, Hao-Chung.

In: IEEE Photonics Technology Letters, Vol. 25, No. 21, 6589944, 21.10.2013, p. 2062-2065.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Advantages of blue LEDs with graded-composition AlGaN/GaN superlattice EBL

AU - Lin, Bing Cheng

AU - Chen, Kuo Ju

AU - Han, Hau Vei

AU - Lan, Yu-Pin

AU - Chiu, Ching Hsueh

AU - Lin, Chien-Chung

AU - Shih, Min Hsiung

AU - Lee, Po-Tsung

AU - Kuo, Hao-Chung

PY - 2013/10/21

Y1 - 2013/10/21

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AB - InGaN/GaN light-emitting diodes (LEDs) with graded-composition AlGaN/GaN superlattice (SL) electron blocking layer (EBL) were designed and grown by metal-organic chemical vapor deposition. The simulation results demonstrated that the LED with a graded-composition AlGaN/GaN SL EBL have superior hole injection efficiency and lower electron leakage over the LED with a conventional AlGaN EBL or normal AlGaN/GaN SL EBL. Therefore, the efficiency droop can be alleviated to be ~20%from maximum at an injection current of 15-120 mA, which is smaller than that for conventional AlGaN EBL (30%). The corresponding experimental results also confirm that the use of a graded-composition AlGaN/GaN SL EBL can markedly enhance the light output power by 60%.

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