Advantages of active pixel circuit using gap-type tft as the photo device to sense low intensity light

Cheng Che Tu, Sin You Wu, Ya Hsiang Tai

Research output: Contribution to journalConference articlepeer-review

Abstract

The photocurrent, device area, and parasitic capacitance of gap-gate type thin-film transistor (TFT) and photodiode have been compared. With the higher photocurrent, less occupied area, and smaller parasitic capacitance, the gap-type TFT is suitable as photo device in active pixel sensor (APS) to sense low intensity light.

Original languageEnglish
Pages (from-to)1346-1349
Number of pages4
JournalDigest of Technical Papers - SID International Symposium
Volume51
Issue number1
DOIs
StatePublished - 2020
Event57th SID International Symposium, Seminar and Exhibition, Display Week, 2020 - Virtual, Online
Duration: 3 Aug 20207 Aug 2020

Keywords

  • Active pixel sensor (APS), Pixel Circuit
  • Gap-Type TFT
  • Photo Sensor
  • Thin Film Transistors (TFT)

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