Advantage of TiN Schottky gate over conventional Ni for improved electrical characteristics in AlGaN/GaN HEMT

T. Kawanago, K. Kakushima, Y. Kataoka, A. Nishiyama, N. Sugii, H. Wakabayashi, K. Tsutsui, K. Natori, H. Iwai

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

5 Scopus citations

Abstract

Metal induced effects on electrical characteristics in AlGaN/GaN Schottky HEMT are reported. Focus is given to the collapse of drain current attributed to Schottky metal. Of particular interest for discussion is that TiN gate can suppresses the collapse of drain current compared with conventional Ni gate. Nitrogen concentrations in TiN gate are found to be correlated to the current collapse, indicating that the nitrogen vacancy is responsible for the traps in AlGaN/GaN HEMT. The reduction in a concentration gradient of nitrogen should be accomplished for preventing the formation of the traps. Because of the metal dependent collapse of the drain current, the traps are considered to be formed under the gate edge on the drain side in AlGaN layer.

Original languageEnglish
Title of host publicationESSDERC 2013 - Proceedings of the 43rd European Solid-State Device Research Conference
PublisherIEEE Computer Society
Pages107-110
Number of pages4
ISBN (Print)9781479906499
DOIs
StatePublished - 2013
Event43rd European Solid-State Device Research Conference, ESSDERC 2013 - Bucharest, Romania
Duration: 16 Sep 201320 Sep 2013

Publication series

NameEuropean Solid-State Device Research Conference
ISSN (Print)1930-8876

Conference

Conference43rd European Solid-State Device Research Conference, ESSDERC 2013
CountryRomania
CityBucharest
Period16/09/1320/09/13

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