Advantage of small geometry silicon MOSFETs for high-frequency analog applications under low power supply voltage of 0.5V

M. Saito; M. Ono; R. Fujimoto; C. Takahashi; H. Tanimoto; N. Ito; T. Ohguro; T. Yoshitomi; H. S. Momose; H. Iwai

doi:10.1109/VLSIT.1995.520863

Advantage of small geometry silicon MOSFETs for high-frequency analog applications under low power supply voltage of 0.5V

M. Saito^*, M. Ono, R. Fujimoto, C. Takahashi, H. Tanimoto, N. Ito, T. Ohguro, T. Yoshitomi, H. S. Momose, H. Iwai

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Contribution to journal › Conference article › peer-review

10 Scopus citations

Abstract

Low noise high-frequency analog operation of small geometry silicon MOSFETs are demonstrated. By scaling gate length down to 0.3 - sub 0.1 μm regions, excellent low noise figure of 1.5 dB at 2 GHz was obtained with low drain current of 0.3 mA/μm at f_T value of 20 - 65 GHz - the same level of today's high performance silicon bipolar transistors in research level. Even at low voltage operation such as 0.5 V, extremely high cutoff frequency of 48 GHz was realized by sub 0.1 μm gate length nMOSFETs. Such low voltage operations allow one order of magnitude smaller power consumption compare with 2V power supply voltage.

Original language	English
Pages (from-to)	71-72
Number of pages	2
Journal	Digest of Technical Papers - Symposium on VLSI Technology
DOIs	https://doi.org/10.1109/VLSIT.1995.520863
State	Published - 1995
Event	Proceedings of the 1995 Symposium on VLSI Technology - Kyoto, Jpn Duration: 6 Jun 1995 → 8 Jun 1995

Access to Document

10.1109/VLSIT.1995.520863

Fingerprint Dive into the research topics of 'Advantage of small geometry silicon MOSFETs for high-frequency analog applications under low power supply voltage of 0.5V'. Together they form a unique fingerprint.

Cite this

@article{688ed268360442879111559dc6b1b502,

title = "Advantage of small geometry silicon MOSFETs for high-frequency analog applications under low power supply voltage of 0.5V",

abstract = "Low noise high-frequency analog operation of small geometry silicon MOSFETs are demonstrated. By scaling gate length down to 0.3 - sub 0.1 μm regions, excellent low noise figure of 1.5 dB at 2 GHz was obtained with low drain current of 0.3 mA/μm at fT value of 20 - 65 GHz - the same level of today's high performance silicon bipolar transistors in research level. Even at low voltage operation such as 0.5 V, extremely high cutoff frequency of 48 GHz was realized by sub 0.1 μm gate length nMOSFETs. Such low voltage operations allow one order of magnitude smaller power consumption compare with 2V power supply voltage.",

author = "M. Saito and M. Ono and R. Fujimoto and C. Takahashi and H. Tanimoto and N. Ito and T. Ohguro and T. Yoshitomi and Momose, {H. S.} and H. Iwai",

year = "1995",

doi = "10.1109/VLSIT.1995.520863",

language = "English",

pages = "71--72",

journal = "Digest of Technical Papers - Symposium on VLSI Technology",

issn = "0743-1562",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "null ; Conference date: 06-06-1995 Through 08-06-1995",

}

Advantage of small geometry silicon MOSFETs for high-frequency analog applications under low power supply voltage of 0.5V. / Saito, M.; Ono, M.; Fujimoto, R.; Takahashi, C.; Tanimoto, H.; Ito, N.; Ohguro, T.; Yoshitomi, T.; Momose, H. S.; Iwai, H.

In: Digest of Technical Papers - Symposium on VLSI Technology, 1995, p. 71-72.

Research output: Contribution to journal › Conference article › peer-review

TY - JOUR

T1 - Advantage of small geometry silicon MOSFETs for high-frequency analog applications under low power supply voltage of 0.5V

AU - Saito, M.

AU - Ono, M.

AU - Fujimoto, R.

AU - Takahashi, C.

AU - Tanimoto, H.

AU - Ito, N.

AU - Ohguro, T.

AU - Yoshitomi, T.

AU - Momose, H. S.

AU - Iwai, H.

PY - 1995

Y1 - 1995

N2 - Low noise high-frequency analog operation of small geometry silicon MOSFETs are demonstrated. By scaling gate length down to 0.3 - sub 0.1 μm regions, excellent low noise figure of 1.5 dB at 2 GHz was obtained with low drain current of 0.3 mA/μm at fT value of 20 - 65 GHz - the same level of today's high performance silicon bipolar transistors in research level. Even at low voltage operation such as 0.5 V, extremely high cutoff frequency of 48 GHz was realized by sub 0.1 μm gate length nMOSFETs. Such low voltage operations allow one order of magnitude smaller power consumption compare with 2V power supply voltage.

AB - Low noise high-frequency analog operation of small geometry silicon MOSFETs are demonstrated. By scaling gate length down to 0.3 - sub 0.1 μm regions, excellent low noise figure of 1.5 dB at 2 GHz was obtained with low drain current of 0.3 mA/μm at fT value of 20 - 65 GHz - the same level of today's high performance silicon bipolar transistors in research level. Even at low voltage operation such as 0.5 V, extremely high cutoff frequency of 48 GHz was realized by sub 0.1 μm gate length nMOSFETs. Such low voltage operations allow one order of magnitude smaller power consumption compare with 2V power supply voltage.

UR - http://www.scopus.com/inward/record.url?scp=0029513731&partnerID=8YFLogxK

U2 - 10.1109/VLSIT.1995.520863

DO - 10.1109/VLSIT.1995.520863

M3 - Conference article

AN - SCOPUS:0029513731

SP - 71

EP - 72

JO - Digest of Technical Papers - Symposium on VLSI Technology

JF - Digest of Technical Papers - Symposium on VLSI Technology

SN - 0743-1562

Y2 - 6 June 1995 through 8 June 1995

ER -

Advantage of small geometry silicon MOSFETs for high-frequency analog applications under low power supply voltage of 0.5V

Abstract

Access to Document

Other files and links

Cite this