Advanced TSV-based crystal resonator devices using 3-d integration scheme with hermetic sealing

Jian Yu Shih; Yen Chi Chen; Chih Hung Chiu; Yu Chen Hu; Chung Lun Lo; Chi Chung Chang; Kuan-Neng Chen

doi:10.1109/LED.2013.2265335

Advanced TSV-based crystal resonator devices using 3-d integration scheme with hermetic sealing

Jian Yu Shih, Yen Chi Chen, Chih Hung Chiu, Yu Chen Hu, Chung Lun Lo, Chi Chung Chang, Kuan-Neng Chen

Department of Electronics Engineering

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

An advanced crystal resonator device scheme using Cu through-silicon via (TSV), 3-D integration, and Si packaging technologies is successfully demonstrated. In addition to robust structural quality, the crystal resonator packaging has excellent electrical characteristics of low leakage current and reliability against harsh environment for MIL-STD-883 hermetic encapsulation. Using 3-D integration technologies and Si packaging, the proposed TSV-based crystal resonator device possesses the manufacturability potential while conventional ones using a metal lid or ceramic enclosure.

Original language	English
Article number	6553120
Pages (from-to)	1041-1043
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	34
Issue number	8
DOIs	https://doi.org/10.1109/LED.2013.2265335
State	Published - 12 Jul 2013

Keywords

3-D integration
crystal resonator through-silicon via (TSV)

Access to Document

10.1109/LED.2013.2265335

Fingerprint Dive into the research topics of 'Advanced TSV-based crystal resonator devices using 3-d integration scheme with hermetic sealing'. Together they form a unique fingerprint.

Cite this

@article{d079b3fa1c4446a1be831e71080eac98,

title = "Advanced TSV-based crystal resonator devices using 3-d integration scheme with hermetic sealing",

abstract = "An advanced crystal resonator device scheme using Cu through-silicon via (TSV), 3-D integration, and Si packaging technologies is successfully demonstrated. In addition to robust structural quality, the crystal resonator packaging has excellent electrical characteristics of low leakage current and reliability against harsh environment for MIL-STD-883 hermetic encapsulation. Using 3-D integration technologies and Si packaging, the proposed TSV-based crystal resonator device possesses the manufacturability potential while conventional ones using a metal lid or ceramic enclosure.",

keywords = "3-D integration, crystal resonator through-silicon via (TSV)",

author = "Shih, {Jian Yu} and Chen, {Yen Chi} and Chiu, {Chih Hung} and Hu, {Yu Chen} and Lo, {Chung Lun} and Chang, {Chi Chung} and Kuan-Neng Chen",

year = "2013",

month = jul,

day = "12",

doi = "10.1109/LED.2013.2265335",

language = "English",

volume = "34",

pages = "1041--1043",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "8",

}

TY - JOUR

T1 - Advanced TSV-based crystal resonator devices using 3-d integration scheme with hermetic sealing

AU - Shih, Jian Yu

AU - Chen, Yen Chi

AU - Chiu, Chih Hung

AU - Hu, Yu Chen

AU - Lo, Chung Lun

AU - Chang, Chi Chung

AU - Chen, Kuan-Neng

PY - 2013/7/12

Y1 - 2013/7/12

N2 - An advanced crystal resonator device scheme using Cu through-silicon via (TSV), 3-D integration, and Si packaging technologies is successfully demonstrated. In addition to robust structural quality, the crystal resonator packaging has excellent electrical characteristics of low leakage current and reliability against harsh environment for MIL-STD-883 hermetic encapsulation. Using 3-D integration technologies and Si packaging, the proposed TSV-based crystal resonator device possesses the manufacturability potential while conventional ones using a metal lid or ceramic enclosure.

AB - An advanced crystal resonator device scheme using Cu through-silicon via (TSV), 3-D integration, and Si packaging technologies is successfully demonstrated. In addition to robust structural quality, the crystal resonator packaging has excellent electrical characteristics of low leakage current and reliability against harsh environment for MIL-STD-883 hermetic encapsulation. Using 3-D integration technologies and Si packaging, the proposed TSV-based crystal resonator device possesses the manufacturability potential while conventional ones using a metal lid or ceramic enclosure.

KW - 3-D integration

KW - crystal resonator through-silicon via (TSV)

UR - http://www.scopus.com/inward/record.url?scp=84881027689&partnerID=8YFLogxK

U2 - 10.1109/LED.2013.2265335

DO - 10.1109/LED.2013.2265335

M3 - Article

AN - SCOPUS:84881027689

VL - 34

SP - 1041

EP - 1043

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 8

M1 - 6553120

ER -

Advanced TSV-based crystal resonator devices using 3-d integration scheme with hermetic sealing

Abstract

Keywords

Access to Document

Other files and links

Cite this