Advanced TSV-based crystal resonator devices using 3-d integration scheme with hermetic sealing

Jian Yu Shih, Yen Chi Chen, Chih Hung Chiu, Yu Chen Hu, Chung Lun Lo, Chi Chung Chang, Kuan-Neng Chen

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

An advanced crystal resonator device scheme using Cu through-silicon via (TSV), 3-D integration, and Si packaging technologies is successfully demonstrated. In addition to robust structural quality, the crystal resonator packaging has excellent electrical characteristics of low leakage current and reliability against harsh environment for MIL-STD-883 hermetic encapsulation. Using 3-D integration technologies and Si packaging, the proposed TSV-based crystal resonator device possesses the manufacturability potential while conventional ones using a metal lid or ceramic enclosure.

Original languageEnglish
Article number6553120
Pages (from-to)1041-1043
Number of pages3
JournalIEEE Electron Device Letters
Volume34
Issue number8
DOIs
StatePublished - 12 Jul 2013

Keywords

  • 3-D integration
  • crystal resonator through-silicon via (TSV)

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