Advanced MOSFETs using HfTaON/SiO2 gate dielectric and TaN metal gate with excellent performances for low standby power application

Xiongfei Yu*, Chunxiang Zhu, Mingbin Yu, M. F. Li, Albert Chin, C. H. Tung, D. Gui, Dim Lee Kwong

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Scopus citations

Abstract

In this work, a novel HfTaON/SiO2 gate dielectric with metal gate has been investigated for low standby power CMOS application. This gate stack exhibits excellent electrical performances, including low leakage current relative to Hf-silicates, good thermal stability, very low interface state density, superior electron and hole mobilities (100% and 96% of universal curves at 0.8 MV/cm), and excellent BTI characteristic. Therefore, the HfTaON/SiO 2 has a potential to replace current SiO2 and SiON as the gate dielectric for advanced low standby power application.

Original languageEnglish
Title of host publicationIEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest
Pages27-30
Number of pages4
DOIs
StatePublished - 1 Dec 2005
EventIEEE International Electron Devices Meeting, 2005 IEDM - Washington, DC, MD, United States
Duration: 5 Dec 20057 Dec 2005

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume2005
ISSN (Print)0163-1918

Conference

ConferenceIEEE International Electron Devices Meeting, 2005 IEDM
CountryUnited States
CityWashington, DC, MD
Period5/12/057/12/05

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    Yu, X., Zhu, C., Yu, M., Li, M. F., Chin, A., Tung, C. H., Gui, D., & Kwong, D. L. (2005). Advanced MOSFETs using HfTaON/SiO2 gate dielectric and TaN metal gate with excellent performances for low standby power application. In IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest (pp. 27-30). [1609257] (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2005). https://doi.org/10.1109/IEDM.2005.1609257