Advanced metal-gate/high-κ CMOS with small EOT and better high field mobility

Albert Chin*, W. B. Chen, P. C. Chen, Y. H. Wu, C. C. Chi, Y. J. Lee, K. S. Chang-Liao, C. H. Kuan

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Continuously down-scaling the operation voltage, saving energy, and maintaining high performance are the major challenge for CMOS device. Small 0.95∼1.4 nm equivalent-oxide thickness (EOT) and 1.4∼2.5X better mobility than universal SiO2/Si data are achieved in metal-gate/high-κ/Ge CMOS at 1 MV/cm effective field (Eeff). These excellent performances were achieved by using interface engineering and novel process, to overcome the poor high-κ/Ge interface reaction, low source-drain dopant activation, and n+/p ohmic contact. The all-Ge CMOS with measured higher electron and hole mobility has irreplaceable merits of much simpler process, lower cost, and potentially higher yield than the InGaAs-nMOS/Ge-pMOS platform for IC manufacture.

Original languageEnglish
Title of host publicationICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
DOIs
StatePublished - 1 Dec 2012
Event2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2012 - Xi'an, China
Duration: 29 Oct 20121 Nov 2012

Publication series

NameICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings

Conference

Conference2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2012
CountryChina
CityXi'an
Period29/10/121/11/12

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