Advanced gate-all-around fin-like poly-si tfts with multiple nanowire channels

Shih Wei Tu*, Ta Chuan Liao, Wei Kai Lin, Cheng Chin Liu, Ya-Hsiang Tai, Huang-Chung Cheng, Feng Tso Chien, Chii Wen Chen, Wan Lu Chen

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

Abstract

The gate-all-around (GAA) fin-like poly-Si TFTs (FinTFTs) with multiple nanowire channels (MNCs) have been fabricated using a simple process to demonstrate high performance electrical characteristics. The fin-like nanowire (NW) channel with high body thickness-to-width ratio (T Fin /W Fin ), approximately equals to one, was realized only with a sidewall-spacer formation. The unique suspending MNCs were also achieved to build the GAA structure. By the way, the GAA-MNC FinTFTs showed outstanding three-dimensional gate controllability and excellent electrical characteristics, which revealed a high ON/OFF current ratio (≥10 8 ), a low threshold voltage, a steep subthreshold swing, a near-free drain-induced barrier lowering and a good reliability. Therefore, such the high-performance GAA-MNC FinTFTs are very suitable for the applications in the system-on-panel (SOP) and three-dimensional (3D) circuits.

Original languageEnglish
Pages (from-to)1270-1273
Number of pages4
JournalDigest of Technical Papers - SID International Symposium
Volume39
Issue number3
DOIs
StatePublished - 30 Oct 2008
Event2008 SID International Symposium - Los Angeles, CA, United States
Duration: 20 May 200821 May 2008

Fingerprint Dive into the research topics of 'Advanced gate-all-around fin-like poly-si tfts with multiple nanowire channels'. Together they form a unique fingerprint.

Cite this