Advanced electrical imaging of dislocations in Mg-In-codoped GaN films

Sy Hann Chen*, Sheng Ping Hou, J. H. Hsieh, F. C. Chang, Wei-Kuo Chen

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

Conducting atomic force microscopy and scanning surface-potential microscopy have been applied to image the surfaces of Mg-In-codoped GaN films grown by low-pressure metal-organic chemical-vapor deposition. Biscyclopentadienylmagnesium (C P2 Mg) and trimethylindium (TMIn) have been used as the codoping sources in the experiment. The dislocation density at the film surface reduces to the lowest level (∼1.0× 109 cm-2) when the TMInC P2 Mg flow rate ratio is about 1. The dislocation density tends to rise when the flow ratio increases, and carriers of the film accumulate near the rim of the dislocation at an accelerated speed. The work function of dislocation is also found lower than that of nondislocation areas. Such electrical unevenness may seriously influence the light emission of the component, which should not be ignored during fabrication and deserves careful attention.

Original languageEnglish
Pages (from-to)108-112
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume24
Issue number1
DOIs
StatePublished - 1 Jan 2006

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