Advanced CMOS technology portfolio for RF IC applications

Chih Sheng Chang; Chih Ping Chao; John G.J. Chern; Jack Yuan Chen Sun

doi:10.1109/TED.2005.850631

Advanced CMOS technology portfolio for RF IC applications

Chih Sheng Chang^*, Chih Ping Chao, John G.J. Chern, Jack Yuan Chen Sun

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Contribution to journal › Article › peer-review

31 Scopus citations

Abstract

A high quality 90-nm CMOS-based technology portfolio suitable for various RF IC applications is presented. The portfolio is built up by a wide selection of active and passive components and a user-friendly process design kit (PDK). Layout-optimized RF components are studied in details including state-of-the-art 90 nm RFMOS devices with 120-160 GHz f_T and very low noise figures, varactors with tradeoff between quality factor and tuning ratio, precision capacitors with metal-insulator-metal and metal-over-metal schemes, and a variety of inductor structures suitable for different RF designs. The effectiveness for isolating substrate RF noise is also compared among several layout schemes. Finally the guidelines and requirements for constructing a useful PDK are addressed.

Original language	English
Pages (from-to)	1324-1334
Number of pages	11
Journal	IEEE Transactions on Electron Devices
Volume	52
Issue number	7
DOIs	https://doi.org/10.1109/TED.2005.850631
State	Published - Jul 2005

Keywords

Foundry
RF CMOS
RF IC

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title = "Advanced CMOS technology portfolio for RF IC applications",

abstract = "A high quality 90-nm CMOS-based technology portfolio suitable for various RF IC applications is presented. The portfolio is built up by a wide selection of active and passive components and a user-friendly process design kit (PDK). Layout-optimized RF components are studied in details including state-of-the-art 90 nm RFMOS devices with 120-160 GHz fT and very low noise figures, varactors with tradeoff between quality factor and tuning ratio, precision capacitors with metal-insulator-metal and metal-over-metal schemes, and a variety of inductor structures suitable for different RF designs. The effectiveness for isolating substrate RF noise is also compared among several layout schemes. Finally the guidelines and requirements for constructing a useful PDK are addressed.",

keywords = "Foundry, RF CMOS, RF IC",

author = "Chang, {Chih Sheng} and Chao, {Chih Ping} and Chern, {John G.J.} and Sun, {Jack Yuan Chen}",

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AU - Chao, Chih Ping

AU - Chern, John G.J.

AU - Sun, Jack Yuan Chen

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Y1 - 2005/7

N2 - A high quality 90-nm CMOS-based technology portfolio suitable for various RF IC applications is presented. The portfolio is built up by a wide selection of active and passive components and a user-friendly process design kit (PDK). Layout-optimized RF components are studied in details including state-of-the-art 90 nm RFMOS devices with 120-160 GHz fT and very low noise figures, varactors with tradeoff between quality factor and tuning ratio, precision capacitors with metal-insulator-metal and metal-over-metal schemes, and a variety of inductor structures suitable for different RF designs. The effectiveness for isolating substrate RF noise is also compared among several layout schemes. Finally the guidelines and requirements for constructing a useful PDK are addressed.

AB - A high quality 90-nm CMOS-based technology portfolio suitable for various RF IC applications is presented. The portfolio is built up by a wide selection of active and passive components and a user-friendly process design kit (PDK). Layout-optimized RF components are studied in details including state-of-the-art 90 nm RFMOS devices with 120-160 GHz fT and very low noise figures, varactors with tradeoff between quality factor and tuning ratio, precision capacitors with metal-insulator-metal and metal-over-metal schemes, and a variety of inductor structures suitable for different RF designs. The effectiveness for isolating substrate RF noise is also compared among several layout schemes. Finally the guidelines and requirements for constructing a useful PDK are addressed.

KW - Foundry

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KW - RF IC

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JO - Ieee Transactions On Electron Devices

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Advanced CMOS technology portfolio for RF IC applications

Abstract

Keywords

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