We report an efficient p-type doping of NPB layer using WO 3 as a p-dopant. We find that increasing the WO 3 volume percentage can reduce the activation energy of the NPB layer and increase the hole concentration in NPB layer. As a result, the hole-injection can be improved via tunneling through a narrow depletion region due to the increasing band bending which corresponds to the difference of Fermi level position between the ITO and the NPB layer.
|Number of pages||4|
|State||Published - 1 Dec 2006|
|Event||13th International Display Workshops, IDW '06 - Otsu, Japan|
Duration: 6 Dec 2006 → 6 Dec 2006
|Conference||13th International Display Workshops, IDW '06|
|Period||6/12/06 → 6/12/06|