Admittance spectroscopy of the electric properties of 1,4-bis[N-(1- naphthyl)-N′-phenylamino]-4,4′ diamine doped with tungsten oxide

M. T. Hsieh, C. C. Chang, C. A. Hu, Y. T. Huang, S. L. Yang, Jenn-Fang Chen, S. W. Hwang, C. H. Chen

Research output: Contribution to conferencePaper

Abstract

We report an efficient p-type doping of NPB layer using WO 3 as a p-dopant. We find that increasing the WO 3 volume percentage can reduce the activation energy of the NPB layer and increase the hole concentration in NPB layer. As a result, the hole-injection can be improved via tunneling through a narrow depletion region due to the increasing band bending which corresponds to the difference of Fermi level position between the ITO and the NPB layer.

Original languageEnglish
Pages1315-1318
Number of pages4
StatePublished - 1 Dec 2006
Event13th International Display Workshops, IDW '06 - Otsu, Japan
Duration: 6 Dec 20066 Dec 2006

Conference

Conference13th International Display Workshops, IDW '06
CountryJapan
CityOtsu
Period6/12/066/12/06

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    Hsieh, M. T., Chang, C. C., Hu, C. A., Huang, Y. T., Yang, S. L., Chen, J-F., Hwang, S. W., & Chen, C. H. (2006). Admittance spectroscopy of the electric properties of 1,4-bis[N-(1- naphthyl)-N′-phenylamino]-4,4′ diamine doped with tungsten oxide. 1315-1318. Paper presented at 13th International Display Workshops, IDW '06, Otsu, Japan.