Adaptive finite volume simulation of semiconductor devices on cluster architecture

Yi-Ming Li*, Pu Chen, Jinn Liang Liu, Tien Sheng Chao, S. M. Sze

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingChapter

3 Scopus citations

Abstract

A new scientific computing algorithm for numerical solutions of a set of fundamental semiconductor device equations is presented. This simulation based on adaptive mesh, finite volume, monotone iterative, and a posteriori error estimation methods, is proposed and implemented successfully on a Linux-cluster computing environment. The new approach fully exploits the inherent parallelism of the monotone finite volume formulation of the basic semiconductor device equations and the cluster architecture in message passing interface (MPI) library. Parallel results demonstrate an excellent speedup with respect to the number of processor. Benchmarks and numerical results for a typical MOSFET device are also presented to show the accuracy and efficiency of the method.

Original languageEnglish
Title of host publicationRecent Advances in Applied and Theoretical Mathematics
PublisherWorld Scientific and Engineering Academy and Society
Pages107-112
Number of pages6
ISBN (Print)9608052211
StatePublished - 1 Dec 2000

Keywords

  • Adaptive Mesh
  • Cluster Computing
  • Finite Volume Method
  • Monotone Iterative Method
  • Semiconductor Device Simulation

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  • Cite this

    Li, Y-M., Chen, P., Liu, J. L., Chao, T. S., & Sze, S. M. (2000). Adaptive finite volume simulation of semiconductor devices on cluster architecture. In Recent Advances in Applied and Theoretical Mathematics (pp. 107-112). World Scientific and Engineering Academy and Society.