Active guard ring to improve latch-up immunity

Hui Wen Tsai, Ming-Dou Ker

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

A new design concept named as active guard ring and related circuit implementation to improve the latch-up immunity of ICs are proposed. Using additional sensing circuit and active buffer to turn ON the electrostatic discharge (ESD) protection transistors, the large-dimensional ESD (or I/O) devices can provide or receive extra compensation current to the negative or positive current perturbation during the latch-up current test. The new proposed solution has been verified in 0.6-μ m 5 V process to have much higher latch-up resistance compared with the conventional prevention method of guard ring in CMOS technology.

Original languageEnglish
Article number6937197
Pages (from-to)4145-4152
Number of pages8
JournalIEEE Transactions on Electron Devices
Volume61
Issue number12
DOIs
StatePublished - 1 Dec 2014

Keywords

  • Electrostatic discharge (ESD) protection
  • guard ring
  • latchup.

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