Active ESD shunt with transistor feedback to reduce Latchup susceptibility or false triggering

Paul C F Tong*, Wensong Chen, Ming-Dou Ker, John Hui, Ping Ping Xu, Patty Z Q Liu

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

Abstract

We present an anomalous latchup failure phenomenon related to the large Nwell resistor associated with the generic RC-triggered, MOSFET-based Active Clamp circuit for on-chip ESD protection between VCC and VSS buses. A novel Active Clamp circuit with PMOS feedback technique has been proposed to reduce the IC's susceptibility to Latchup during negative current injection at neighboring I/O pads or false triggering of the RC trigger circuit due to noise on the VCC power line. The effectiveness of this new Active Clamp circuit is confirmed by our experiment and simulation results. Optimisation of the size of the PMOS feedback transistor is also discussed in this paper.

Original languageEnglish
Pages820-823
Number of pages4
StatePublished - 1 Dec 2004
Event2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004 - Beijing, China
Duration: 18 Oct 200421 Oct 2004

Conference

Conference2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004
CountryChina
CityBeijing
Period18/10/0421/10/04

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