Active Electrostatic Discharge (ESD) Device for On-Chip ESD Protection in Sub-Quarter-Micron Complementary Metal-Oxide Semiconductor (CMOS) Process

Ming-Dou Ker*, Tang Kui Tseng

*Corresponding author for this work

Research output: Contribution to journalArticle

1 Scopus citations

Abstract

A novel electrostatic discharge (ESD) protection device with a threshold voltage of ∼0V for complementary metal-oxide semiconductor (CMOS) integrated circuits in sub-quarter-micron CMOS technology is proposed. Quite different to the traditional ESD protection devices, such an active ESD device is originally standing in its turn-on state when the IC is zapped under ESD events. Therefore, such an active ESD device has the fastest turn-on speed and the lowest turn-on voltage to effectively protect the internal circuits with a much thinner gate oxide in future sub-0.1 μm CMOS technology. The proposed active BSD device is fully process-compatible to the general sub-quarter-micron CMOS process.

Original languageEnglish
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume43
Issue number1 A/B
DOIs
StatePublished - 15 Jan 2004

Keywords

  • Active ESD device
  • Electrostatic discharge (ESD)
  • Leakage current
  • Threshold voltage

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