Activation of p-type GaN in a pure oxygen ambient

Tzu Chi Wen*, Shih Chang Lee, Wei-I Lee, Tsung Yu Chen, Shin Hsiung Chan, Jian Shihn Tsang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

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Abstract

In this study, we activated p-type GaN in a pure oxygen ambient by rapid thermal annealing. The sheet resistance of p-type GaN was greatly reduced from > 107 Ω/□ to 7.06 × 104 Ω/□ after annealing in oxygen ambient at 500°C. The photoluminescence intensity of blue emission increased by one order of magnitude compared to the as-grown sample. Moreover, the sheet resistance of p-type GaN annealed in pure oxygen ambient is lower than that of p-type GaN annealed in nitrogen ambient. The carrier concentrations of the samples annealed in oxygen ambient are higher than those annealed in nitrogen ambient. The better activation of p-type GaN in oxygen ambient is due to the higher activity of oxygen than that of nitrogen. Oxygen would remove hydrogen that passivates Mg atoms by forming H2O at a lower temperature.

Original languageEnglish
Pages (from-to)L495-L497
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume40
Issue number5 B
DOIs
StatePublished - 15 May 2001

Keywords

  • Activation
  • Hall measurement
  • Hydrogen
  • Nitrogen ambient
  • Oxygen ambient
  • p-type GaN
  • Photoluminescence
  • Rapid thermal annealing

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