Activated kinetics of room-temperature-deposited SrTiO 3 thin films investigated by reflection-high-energy-electron-diffraction-monitored annealing at different heating rates

Te Chun Wang*, Jung Yuee Lee, Chih Chang Hsieh, Jenh-Yih Juang, Kaung-Hsiung Wu, Tzeng Ming Uen, Yih Shun Gou

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

A series of reflection-high-energy-electron-diffraction-monitored annealings with different heating rates have been conducted on Strontium Titanate films deposited by laser ablation at room temperature. All the films exhibited a steep RHEED intensity rise above 660°C during annealing with increasing temperature. The peak temperatures of the intensity derivatives were found to shift at different heating rates, suggesting an activated surface state transition. A Kissinger type plot of the peak temperatures showed an effective activation energy of 4eV.

Original languageEnglish
Pages (from-to)1067-1068
Number of pages2
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume44
Issue number2
DOIs
StatePublished - 1 Feb 2005

Keywords

  • Activation energy
  • Kinetics
  • Kissinger plot
  • Reflection high-energy electron diffraction
  • RHEED

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