Achieving high field-effect mobility in amorphous indium-gallium-zinc oxide by capping a strong reduction layer

Hsiao-Wen Zan*, Chun Cheng Yeh, Hsin-Fei Meng, Chuang Chuang Tsai, Liang Hao Chen

*Corresponding author for this work

Research output: Contribution to journalArticle

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Chemical Compounds

Engineering & Materials Science