Achieving high field-effect mobility in amorphous indium-gallium-zinc oxide by capping a strong reduction layer

Hsiao-Wen Zan; Chun Cheng Yeh; Hsin-Fei Meng; Chuang Chuang Tsai; Liang Hao Chen

doi:10.1002/adma.201200683

Achieving high field-effect mobility in amorphous indium-gallium-zinc oxide by capping a strong reduction layer

Hsiao-Wen Zan^*, Chun Cheng Yeh, Hsin-Fei Meng, Chuang Chuang Tsai, Liang Hao Chen

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

103 Scopus citations

Abstract

An effective approach to reduce defects and increase electron mobility in a-IGZO thin-film transistors (a-IGZO TFTs) is introduced. A strong reduction layer, calcium, is capped onto the back interface of a-IGZO TFT. After calcium capping, the effective electron mobility of a-IGZO TFT increases from 12 cm ² V^-1 s^-1 to 160 cm² V^-1 s^-1. This high mobility is a new record, which implies that the proposed defect reduction effect is key to improve electron transport in oxide semiconductor materials.

Original language	English
Pages (from-to)	3509-3514
Number of pages	6
Journal	Advanced Materials
Volume	24
Issue number	26
DOIs	https://doi.org/10.1002/adma.201200683
State	Published - 10 Jul 2012

Keywords

defect reduction
high mobility
oxide semiconductors
oxygen deficiency
thin film transistors

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abstract = "An effective approach to reduce defects and increase electron mobility in a-IGZO thin-film transistors (a-IGZO TFTs) is introduced. A strong reduction layer, calcium, is capped onto the back interface of a-IGZO TFT. After calcium capping, the effective electron mobility of a-IGZO TFT increases from 12 cm 2 V-1 s-1 to 160 cm2 V-1 s-1. This high mobility is a new record, which implies that the proposed defect reduction effect is key to improve electron transport in oxide semiconductor materials.",

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AU - Zan, Hsiao-Wen

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AU - Meng, Hsin-Fei

AU - Tsai, Chuang Chuang

AU - Chen, Liang Hao

PY - 2012/7/10

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N2 - An effective approach to reduce defects and increase electron mobility in a-IGZO thin-film transistors (a-IGZO TFTs) is introduced. A strong reduction layer, calcium, is capped onto the back interface of a-IGZO TFT. After calcium capping, the effective electron mobility of a-IGZO TFT increases from 12 cm 2 V-1 s-1 to 160 cm2 V-1 s-1. This high mobility is a new record, which implies that the proposed defect reduction effect is key to improve electron transport in oxide semiconductor materials.

AB - An effective approach to reduce defects and increase electron mobility in a-IGZO thin-film transistors (a-IGZO TFTs) is introduced. A strong reduction layer, calcium, is capped onto the back interface of a-IGZO TFT. After calcium capping, the effective electron mobility of a-IGZO TFT increases from 12 cm 2 V-1 s-1 to 160 cm2 V-1 s-1. This high mobility is a new record, which implies that the proposed defect reduction effect is key to improve electron transport in oxide semiconductor materials.

KW - defect reduction

KW - high mobility

KW - oxide semiconductors

KW - oxygen deficiency

KW - thin film transistors

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Achieving high field-effect mobility in amorphous indium-gallium-zinc oxide by capping a strong reduction layer

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