Abstract
An effective approach to reduce defects and increase electron mobility in a-IGZO thin-film transistors (a-IGZO TFTs) is introduced. A strong reduction layer, calcium, is capped onto the back interface of a-IGZO TFT. After calcium capping, the effective electron mobility of a-IGZO TFT increases from 12 cm 2 V-1 s-1 to 160 cm2 V-1 s-1. This high mobility is a new record, which implies that the proposed defect reduction effect is key to improve electron transport in oxide semiconductor materials.
| Original language | English |
|---|---|
| Pages (from-to) | 3509-3514 |
| Number of pages | 6 |
| Journal | Advanced Materials |
| Volume | 24 |
| Issue number | 26 |
| DOIs | |
| State | Published - 10 Jul 2012 |
Keywords
- defect reduction
- high mobility
- oxide semiconductors
- oxygen deficiency
- thin film transistors
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Zan, H-W., Yeh, C. C., Meng, H-F., Tsai, C. C., & Chen, L. H. (2012). Achieving high field-effect mobility in amorphous indium-gallium-zinc oxide by capping a strong reduction layer. Advanced Materials, 24(26), 3509-3514. https://doi.org/10.1002/adma.201200683