Achieving high field-effect mobility in amorphous indium-gallium-zinc oxide by capping a strong reduction layer

Hsiao-Wen Zan*, Chun Cheng Yeh, Hsin-Fei Meng, Chuang Chuang Tsai, Liang Hao Chen

*Corresponding author for this work

Research output: Contribution to journalArticle

96 Scopus citations

Abstract

An effective approach to reduce defects and increase electron mobility in a-IGZO thin-film transistors (a-IGZO TFTs) is introduced. A strong reduction layer, calcium, is capped onto the back interface of a-IGZO TFT. After calcium capping, the effective electron mobility of a-IGZO TFT increases from 12 cm 2 V-1 s-1 to 160 cm2 V-1 s-1. This high mobility is a new record, which implies that the proposed defect reduction effect is key to improve electron transport in oxide semiconductor materials.

Original languageEnglish
Pages (from-to)3509-3514
Number of pages6
JournalAdvanced Materials
Volume24
Issue number26
DOIs
StatePublished - 10 Jul 2012

Keywords

  • defect reduction
  • high mobility
  • oxide semiconductors
  • oxygen deficiency
  • thin film transistors

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