Achieving high field-effect mobility in amorphous indium-gallium-zinc oxide by capping a strong reduction layer

Hsiao-Wen Zan; Chun Cheng Yeh; Hsin-Fei Meng; Chuang Chuang Tsai; Liang Hao Chen

doi:10.1002/adma.201200683

Achieving high field-effect mobility in amorphous indium-gallium-zinc oxide by capping a strong reduction layer

Hsiao-Wen Zan^*, Chun Cheng Yeh, Hsin-Fei Meng, Chuang Chuang Tsai, Liang Hao Chen

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

103 Scopus citations

Abstract

An effective approach to reduce defects and increase electron mobility in a-IGZO thin-film transistors (a-IGZO TFTs) is introduced. A strong reduction layer, calcium, is capped onto the back interface of a-IGZO TFT. After calcium capping, the effective electron mobility of a-IGZO TFT increases from 12 cm ² V^-1 s^-1 to 160 cm² V^-1 s^-1. This high mobility is a new record, which implies that the proposed defect reduction effect is key to improve electron transport in oxide semiconductor materials.

Original language	English
Pages (from-to)	3509-3514
Number of pages	6
Journal	Advanced Materials
Volume	24
Issue number	26
DOIs	https://doi.org/10.1002/adma.201200683
State	Published - 10 Jul 2012

Keywords

defect reduction
high mobility
oxide semiconductors
oxygen deficiency
thin film transistors

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@article{e5e6220090df4f5b9efa93d38bab8dc1,

title = "Achieving high field-effect mobility in amorphous indium-gallium-zinc oxide by capping a strong reduction layer",

abstract = "An effective approach to reduce defects and increase electron mobility in a-IGZO thin-film transistors (a-IGZO TFTs) is introduced. A strong reduction layer, calcium, is capped onto the back interface of a-IGZO TFT. After calcium capping, the effective electron mobility of a-IGZO TFT increases from 12 cm 2 V-1 s-1 to 160 cm2 V-1 s-1. This high mobility is a new record, which implies that the proposed defect reduction effect is key to improve electron transport in oxide semiconductor materials.",

keywords = "defect reduction, high mobility, oxide semiconductors, oxygen deficiency, thin film transistors",

author = "Hsiao-Wen Zan and Yeh, {Chun Cheng} and Hsin-Fei Meng and Tsai, {Chuang Chuang} and Chen, {Liang Hao}",

year = "2012",

month = jul,

day = "10",

doi = "10.1002/adma.201200683",

language = "English",

volume = "24",

pages = "3509--3514",

journal = "Advanced Materials",

issn = "0935-9648",

publisher = "Wiley-Blackwell",

number = "26",

}

TY - JOUR

T1 - Achieving high field-effect mobility in amorphous indium-gallium-zinc oxide by capping a strong reduction layer

AU - Zan, Hsiao-Wen

AU - Yeh, Chun Cheng

AU - Meng, Hsin-Fei

AU - Tsai, Chuang Chuang

AU - Chen, Liang Hao

PY - 2012/7/10

Y1 - 2012/7/10

N2 - An effective approach to reduce defects and increase electron mobility in a-IGZO thin-film transistors (a-IGZO TFTs) is introduced. A strong reduction layer, calcium, is capped onto the back interface of a-IGZO TFT. After calcium capping, the effective electron mobility of a-IGZO TFT increases from 12 cm 2 V-1 s-1 to 160 cm2 V-1 s-1. This high mobility is a new record, which implies that the proposed defect reduction effect is key to improve electron transport in oxide semiconductor materials.

AB - An effective approach to reduce defects and increase electron mobility in a-IGZO thin-film transistors (a-IGZO TFTs) is introduced. A strong reduction layer, calcium, is capped onto the back interface of a-IGZO TFT. After calcium capping, the effective electron mobility of a-IGZO TFT increases from 12 cm 2 V-1 s-1 to 160 cm2 V-1 s-1. This high mobility is a new record, which implies that the proposed defect reduction effect is key to improve electron transport in oxide semiconductor materials.

KW - defect reduction

KW - high mobility

KW - oxide semiconductors

KW - oxygen deficiency

KW - thin film transistors

UR - http://www.scopus.com/inward/record.url?scp=84863692569&partnerID=8YFLogxK

U2 - 10.1002/adma.201200683

DO - 10.1002/adma.201200683

M3 - Article

C2 - 22678659

AN - SCOPUS:84863692569

VL - 24

SP - 3509

EP - 3514

JO - Advanced Materials

JF - Advanced Materials

SN - 0935-9648

IS - 26

ER -