Achieving good bias stress reliability in organic transistor with vertical channel

Hung Cheng Lin, Hsiao-Wen Zan*, Hsin-Fei Meng

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

Unlike organic field-effect transistor with accumulated channel at dielectric/semiconductor interface, vertical organic transistor exhibits bulk channel current and hence performs good bias stress reliability. Adding self-assemble-monolayer to treat vertical channel can further modulate the charge-trapping surrounding the base electrode and hence influence the bias stress reliability. During 4300-s positive/negative bias stresses, stable output current and on/off ratio are demonstrated by using octadecyltrichlorosilane (OTS)-passivated vertical channel. The good reliability together with the low operation voltage and the high output current make vertical organic transistors capable of driving organic light emitting diode.

Original languageEnglish
Pages (from-to)1531-1535
Number of pages5
JournalOrganic Electronics
Volume15
Issue number7
DOIs
StatePublished - 1 Jan 2014

Keywords

  • Bias stress
  • OLED driving
  • Organic transistor
  • SAM

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